AP4028EYT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4028EYT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.12 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14.5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PMPAK3X3

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AP4028EYT datasheet

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AP4028EYT

AP4028EYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 14.5A G S D D Description D D AP4028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resist

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AP4028EYT

AP4028EH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-Free Description AP4028 series are from Advanced Power innovated design and silicon G D process techno

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ap4028em.pdf pdf_icon

AP4028EYT

AP4028EM Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 9m D Low On-resistance ID 12.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4028 series are from Advanced Power innovated design and G silicon process technology

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AP4028EYT

AP4028EJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 9m G Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-Free S Description AP4028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possi

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