AP4028EH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4028EH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 29.7 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 45 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 14 nC
Tiempo de subida (tr): 56 nS
Conductancia de drenaje-sustrato (Cd): 135 pF
Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
Paquete / Cubierta: TO252
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AP4028EH Datasheet (PDF)
ap4028eh.pdf
AP4028EHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-Free DescriptionAP4028 series are from Advanced Power innovated design and siliconGDprocess techno
ap4028em.pdf
AP4028EMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 9mD Low On-resistance ID 12.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4028 series are from Advanced Power innovated design andGsilicon process technology
ap4028ejb.pdf
AP4028EJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 9mG Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-FreeSDescriptionAP4028 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possi
ap4028eyt.pdf
AP4028EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 14.5AGS DDDescriptionDDAP4028 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resist
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