AP3C030YT Todos los transistores

 

AP3C030YT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3C030YT
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: PMPAK3X3
     - Selección de transistores por parámetros

 

AP3C030YT Datasheet (PDF)

 ..1. Size:128K  ape
ap3c030yt.pdf pdf_icon

AP3C030YT

AP3C030YTHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 Simple Drive Requirement N-CH BVDSS 30VD2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID3 7.3AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S2RDS(ON) 60mG2PMPAK 3x3Description ID3 -5.3AAP3C030 series are from Adv

 9.1. Size:220K  ape
ap3c023amt.pdf pdf_icon

AP3C030YT

AP3C023AMTHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement N-CH BVDSS 30V Good Thermal Performance RDS(ON) 10.4m Fast Switching Performance ID3 12A RoHS Compliant & Halogen-Free P-CH BVDSS -30VRDS(ON) 23.5mS1 G1 S2 G2Description ID3 -10AAP3C023A series are from Advanced P

 9.2. Size:138K  ape
ap3c010h.pdf pdf_icon

AP3C030YT

AP3C010HHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 13.5m Fast Switching Performance ID3 12AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S2RDS(ON) 23mG2Description ID3 -12ATO-252-4LAdvanced Power MOSFETs from APE

 9.3. Size:253K  ape
ap3c010m.pdf pdf_icon

AP3C030YT

AP3C010MHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low Gate Charge D1 RDS(ON) 13.5mD1 Fast Switching Performance ID3 9.8AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 23mDescription ID3 -7.6AAP3C010 series are from Advanced Po

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HGB170N10A | BFC23 | AO4914 | 8N60KL-TF3-T | IRFR9220 | H4N65D | SIR496DP

 

 
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