AP3N1R0MT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP3N1R0MT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 54.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 75 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00105 Ohm
   Paquete / Cubierta: PMPAK5X6

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AP3N1R0MT Datasheet (PDF)

..1. Size:163K ape
ap3n1r0mt.pdf

AP3N1R0MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 1.05m Ultra Low On-resistance ID4 245AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N1R0 series are from Advanced Power innovated design andsilicon process technology to achieve the

8.1. Size:68K 1
ap3n1r8mt.pdf

AP3N1R8MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andDsilicon process technology to achieve the

8.2. Size:63K ape
ap3n1r7cyt.pdf

AP3N1R7CYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-FreeGSDDDescriptionDDAP3N1R7C series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resi

8.3. Size:205K ape
ap3n1r8p.pdf

AP3N1R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N1R8 seriesare fromAdvanced Power innovated

8.4. Size:163K ape
ap3n1r8mt.pdf

8.5. Size:319K ape
ap3n1r8mt-l.pdf

AP3N1R8MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andsilicon process technology to achieve th

8.6. Size:163K ape
ap3n1r7mt.pdf

AP3N1R7MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 1.7m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N1R7 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

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