AP10TN5R5MT Todos los transistores

 

AP10TN5R5MT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10TN5R5MT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 1050 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: PMPAK5X6

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AP10TN5R5MT datasheet

 ..1. Size:165K  ape
ap10tn5r5mt.pdf pdf_icon

AP10TN5R5MT

AP10TN5R5MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN5R5 series are from Advanced Power innovated design and silicon process technology to ac

 5.1. Size:165K  ape
ap10tn5r5lmt.pdf pdf_icon

AP10TN5R5MT

AP10TN5R5LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN5R5L series are from Advanced Power innovated design and silicon process technology to

 8.1. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

AP10TN5R5MT

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

 8.2. Size:161K  ape
ap10tn004cmt.pdf pdf_icon

AP10TN5R5MT

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog

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