AP10TN5R5LMT Todos los transistores

 

AP10TN5R5LMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN5R5LMT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 685 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: PMPAK5X6
     - Selección de transistores por parámetros

 

AP10TN5R5LMT Datasheet (PDF)

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AP10TN5R5LMT

AP10TN5R5LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN5R5L series are from Advanced Power innovated designand silicon process technology to

 5.1. Size:165K  ape
ap10tn5r5mt.pdf pdf_icon

AP10TN5R5LMT

AP10TN5R5MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN5R5 series are from Advanced Power innovated designand silicon process technology to ac

 8.1. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

AP10TN5R5LMT

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

 8.2. Size:161K  ape
ap10tn004cmt.pdf pdf_icon

AP10TN5R5LMT

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

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History: FTK5N80DD | CSD85312Q3E | BUK7616-55A | AP98T03GP-HF

 

 
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