AP10TN5R5LMT Todos los transistores

 

AP10TN5R5LMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN5R5LMT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 685 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: PMPAK5X6
 

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AP10TN5R5LMT Datasheet (PDF)

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AP10TN5R5LMT

AP10TN5R5LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN5R5L series are from Advanced Power innovated designand silicon process technology to

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 ap10tn5r5mt.pdf pdf_icon

AP10TN5R5LMT

AP10TN5R5MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN5R5 series are from Advanced Power innovated designand silicon process technology to ac

 8.1. Size:163K  ape
 ap10tn010cmt.pdf pdf_icon

AP10TN5R5LMT

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

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 ap10tn004cmt.pdf pdf_icon

AP10TN5R5LMT

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

MOSTRAR MÁS

Otros transistores... AP3A010MT , AP3A010AMT , AP3700MT , AP2C016LMT , AP2606CMT , AP2602MT , AP1A003GMT , AP10TN5R5MT , IRFB4227 , AP10TN028MT , AP10TN012LMT , AP10TN010CMT , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT .

History: AP20N15AGH | HGP115N15S | AOCA36102E | AP6679BGJ | RS1E200BN | QM4803S | STT5N2VH5

 

 
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