AP10TN012LMT Todos los transistores

 

AP10TN012LMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10TN012LMT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 825 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: PMPAK5X6

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AP10TN012LMT datasheet

 ..1. Size:162K  ape
ap10tn012lmt.pdf pdf_icon

AP10TN012LMT

AP10TN012LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID4 62A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN012L series are from Advanced Power innovated design and silicon process technology to achieve

 6.1. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

AP10TN012LMT

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

 7.1. Size:161K  ape
ap10tn004cmt.pdf pdf_icon

AP10TN012LMT

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog

 7.2. Size:163K  ape
ap10tn004lcmt.pdf pdf_icon

AP10TN012LMT

AP10TN004LCMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004LC series are from Advanced Power innovated design and silicon process technology to ach

Otros transistores... AP3700MT , AP2C016LMT , AP2606CMT , AP2602MT , AP1A003GMT , AP10TN5R5MT , AP10TN5R5LMT , AP10TN028MT , IRFB4115 , AP10TN010CMT , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT .

History: AOT426 | HX3400 | SVF10N65T | RU4N65P | AOWF12N50 | 2SK2760-01

 

 

 

 

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