AP10TN012LMT Todos los transistores

 

AP10TN012LMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN012LMT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 825 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: PMPAK5X6
 

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AP10TN012LMT Datasheet (PDF)

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AP10TN012LMT

AP10TN012LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID4 62AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN012L series are from Advanced Power innovated designand silicon process technology to achieve

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 ap10tn010cmt.pdf pdf_icon

AP10TN012LMT

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

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 ap10tn004cmt.pdf pdf_icon

AP10TN012LMT

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

 7.2. Size:163K  ape
 ap10tn004lcmt.pdf pdf_icon

AP10TN012LMT

AP10TN004LCMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004LC series are from Advanced Power innovated designand silicon process technology to ach

MOSTRAR MÁS

Otros transistores... AP3700MT , AP2C016LMT , AP2606CMT , AP2602MT , AP1A003GMT , AP10TN5R5MT , AP10TN5R5LMT , AP10TN028MT , IRFP250N , AP10TN010CMT , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT .

History: SM3313PSQG | BRFL13N50 | ZXM62P02E6 | 2N7002PT | S10H06R | BMS3004

 

 
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