AP0904GMT Todos los transistores

 

AP0904GMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP0904GMT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: PMPAK5X6

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AP0904GMT datasheet

 ..1. Size:142K  ape
 ap0904gmt.pdf pdf_icon

AP0904GMT

AP0904GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 9.5m Low On-resistance ID 46A G RoHS Compliant & Halogen-Free S D Description D AP0904 series are from Advanced Power inn

 0.1. Size:94K  ape
 ap0904gmt-hf.pdf pdf_icon

AP0904GMT

AP0904GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 9.5m Low On-resistance ID 46A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin

 7.1. Size:106K  ape
 ap0904gh-hf ap0904gj-hf.pdf pdf_icon

AP0904GMT

AP0904GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast

 7.2. Size:59K  ape
 ap0904gyt-hf.pdf pdf_icon

AP0904GMT

AP0904GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40V D Small Size & Lower Profile RDS(ON) 11.5m RoHS Compliant & Halogen-Free ID 13.5A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device d

MOSTRAR MÁS

Otros transistores... AP10TN5R5LMT , AP10TN028MT , AP10TN012LMT , AP10TN010CMT , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , IRF630 , AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P .

History: SWD085R68E7T | EMB17C03G | RUE002N02 | 2SK1345 | RF4E110BN | HY3410B | HY3410PM

 

 

 

 

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