AP3P7R0EP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3P7R0EP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 590 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
AP3P7R0EP Datasheet (PDF)
ap3p7r0ep.pdf

AP3P7R0EPHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
ap3p7r0eh.pdf

AP3P7R0EHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
ap3p7r0emt.pdf

AP3P7R0EMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75AG RoHS Compliant & Halogen-Free HBM ESD 2KVSDDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDsilicon process technolo
ap3p7r0es.pdf

AP3P7R0ESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: APT22M100JCU3 | SSF11NS70UF | IXTP22N15MB | SI4368DY | SSF4N60G | SRT045N012HS2 | SWK15N04V
History: APT22M100JCU3 | SSF11NS70UF | IXTP22N15MB | SI4368DY | SSF4N60G | SRT045N012HS2 | SWK15N04V



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