AP3P7R0EI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3P7R0EI
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 54 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 590 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AP3P7R0EI MOSFET
- Selecciónⓘ de transistores por parámetros
AP3P7R0EI datasheet
ap3p7r0ei.pdf
AP3P7R0EI Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -54A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve
ap3p7r0eh.pdf
AP3P7R0EH Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve
ap3p7r0emt.pdf
AP3P7R0EMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75A G RoHS Compliant & Halogen-Free HBM ESD 2KV S D Description D D AP3P7R0E series are from Advanced Power innovated design and D silicon process technolo
ap3p7r0es.pdf
AP3P7R0ES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve
Otros transistores... AP3N2R2MT-L , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , 4435 , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H .
History: FQB34P10 | QN3109M6N | SWP038R10ES
History: FQB34P10 | QN3109M6N | SWP038R10ES
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