AP3N4R0J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3N4R0J
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 475 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO251
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AP3N4R0J Datasheet (PDF)
ap3n4r0j.pdf

AP3N4R0JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSGDescriptionDSTO-251(J)AP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power i
ap3n4r0p.pdf

AP3N4R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designand
ap3n4r0h.pdf

AP3N4R0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designG
ap3n4r0s.pdf

AP3N4R0SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designand
Otros transistores... AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AON7410 , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES .
History: DI9400T | IPB097N08N3G | IPA65R600C6 | HGN088N15S | TMU8N25Z | SE60120B | S10H16RP
History: DI9400T | IPB097N08N3G | IPA65R600C6 | HGN088N15S | TMU8N25Z | SE60120B | S10H16RP



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