AP3N4R0J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3N4R0J
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 475 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de AP3N4R0J MOSFET
AP3N4R0J Datasheet (PDF)
ap3n4r0j.pdf
AP3N4R0JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSGDescriptionDSTO-251(J)AP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power i
ap3n4r0p.pdf
AP3N4R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designand
ap3n4r0h.pdf
AP3N4R0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designG
ap3n4r0s.pdf
AP3N4R0SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designand
Otros transistores... AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , SPP20N60C3 , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES .
History: 8680A | SWF20N60K
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM615MNA | AGM615MN | AGM615D | AGM614MNA | AGM614MN | AGM614MBP-M1 | AGM614MBP | AGM614D | AGM614A-G | AGM612S | AGM612MNA | AGM612MN | AGM612MBQ | AGM612MBP | AGM612D | AGM612AP
Popular searches
2sc2580 | 2sc710 | 2sc968 | 2sd217 | bdw93c equivalent | cs7n60f | d613 transistor | fdmc8884 mosfet

