AP3P7R0EH Todos los transistores

 

AP3P7R0EH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3P7R0EH

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 59.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 590 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO252

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AP3P7R0EH datasheet

 ..1. Size:205K  ape
 ap3p7r0eh.pdf pdf_icon

AP3P7R0EH

AP3P7R0EH Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve

 6.1. Size:163K  ape
 ap3p7r0emt.pdf pdf_icon

AP3P7R0EH

AP3P7R0EMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75A G RoHS Compliant & Halogen-Free HBM ESD 2KV S D Description D D AP3P7R0E series are from Advanced Power innovated design and D silicon process technolo

 6.2. Size:177K  ape
 ap3p7r0es.pdf pdf_icon

AP3P7R0EH

AP3P7R0ES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve

 6.3. Size:188K  ape
 ap3p7r0em.pdf pdf_icon

AP3P7R0EH

AP3P7R0EM Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Ultra Low On-resistance ID3 -15.5A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description D D AP3P7R0E series are from Advanced Power innovated design and D D silicon process technology t

MOSTRAR MÁS

Otros transistores... AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , K4145 , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES , AP3P6R0S , AP3N4R0S .

History: S2N7002K | MEE4298T | HD830 | AOTF9N90 | WMQ37N03T1 | HY3410MF | 4N70G-TM3-T

 

 

 

 

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