AP3P7R0EH Todos los transistores

 

AP3P7R0EH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3P7R0EH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO252
 

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AP3P7R0EH Datasheet (PDF)

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AP3P7R0EH

AP3P7R0EHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve

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 ap3p7r0emt.pdf pdf_icon

AP3P7R0EH

AP3P7R0EMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75AG RoHS Compliant & Halogen-Free HBM ESD 2KVSDDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDsilicon process technolo

 6.2. Size:177K  ape
 ap3p7r0es.pdf pdf_icon

AP3P7R0EH

AP3P7R0ESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve

 6.3. Size:188K  ape
 ap3p7r0em.pdf pdf_icon

AP3P7R0EH

AP3P7R0EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Ultra Low On-resistance ID3 -15.5A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDDsilicon process technology t

MOSTRAR MÁS

Otros transistores... AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , IRFB3607 , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES , AP3P6R0S , AP3N4R0S .

History: STP12N65M5 | VBE1307 | PMV30ENEA

 

 
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