AP30T10GS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP30T10GS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 115 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de AP30T10GS MOSFET
- Selecciónⓘ de transistores por parámetros
AP30T10GS datasheet
ap30t10gs.pdf
AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19A G RoHS Compliant & Halogen-Free S Description AP30T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
ap30t10gs-hf.pdf
AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized
ap30t10gm.pdf
AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D Lower Gate Charge RDS(ON) 55m D Fast Switching Characteristic ID3 4.5A G S S Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process techno
ap30t10gk-hf.pdf
AP30T10GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8A G Halogen Free & RoHS Compliant Product S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching
Otros transistores... AP3N2R8H , AP3P7R0ES , AP3P6R0S , AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , IRFP450 , AP30T10GI , AP30T10GH , AP30P10GH , AP2N050H , AP2910EC4 , AP2904EC4 , AP25N170I , AP20WN170P .
History: H2N60P
History: H2N60P
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