AP30T10GS Todos los transistores

 

AP30T10GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30T10GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO263
 

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AP30T10GS Datasheet (PDF)

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 ap30t10gs.pdf pdf_icon

AP30T10GS

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAP30T10 series are from Advanced Power innovated designand silicon process technology to achieve the lowest

 0.1. Size:59K  ape
 ap30t10gs-hf.pdf pdf_icon

AP30T10GS

AP30T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 6.1. Size:181K  ape
 ap30t10gm.pdf pdf_icon

AP30T10GS

AP30T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDD Lower Gate Charge RDS(ON) 55mD Fast Switching Characteristic ID3 4.5AGSS Halogen Free & RoHS CompliantSSO-8DDescriptionAP30T10 series are from Advanced Power innovated design andsilicon process techno

 6.2. Size:60K  ape
 ap30t10gk-hf.pdf pdf_icon

AP30T10GS

AP30T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 4.8AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

MOSTRAR MÁS

Otros transistores... AP3N2R8H , AP3P7R0ES , AP3P6R0S , AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , IRF1407 , AP30T10GI , AP30T10GH , AP30P10GH , AP2N050H , AP2910EC4 , AP2904EC4 , AP25N170I , AP20WN170P .

History: IPA65R065C7 | NVMFS6B14NL | SUU10P10-195

 

 
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