IRFI720G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFI720G, SiHFI720GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.8f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt RatingQgs (nC) 3.3 Low Thermal ResistanceQgd (nC) 11 Lead (Pb)-fre

November 2001IRFW720B / IRFI720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

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PD- 95752IRFI734GPbF Lead-Free8/23/04Document Number: 91154 www.vishay.com1IRFI734GPbFDocument Number: 91154 www.vishay.com2IRFI734GPbFDocument Number: 91154 www.vishay.com3IRFI734GPbFDocument Number: 91154 www.vishay.com4IRFI734GPbFDocument Number: 91154 www.vishay.com5IRFI734GPbFDocument Number: 91154 www.vishay.com6IRFI734GPbFPeak Diode Re

StrongIRFET IRFI7440GPbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 2.5m Resonant mode power supplies S OR-ing and redu

StrongIRFET IRFI7446GPbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 40V BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.3m Resonant mode power supplies S OR-ing and redu

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November 2001IRFW740B / IRFI740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

November 2001IRFW710B / IRFI710B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.7 nC)planar, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially tailored t

IRFI740G, SiHFI740GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; AvailableRDS(on) ()VGS = 10 V 0.55f = 60 Hz)RoHS*Qg (Max.) (nC) 66COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Sin

IRFI744G, SiHFI744GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.63f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mmQgs (nC) 12 Dynamic dV/dt RatingQgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av

IRFI730G, SiHFI730GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 1.0f = 60 Hz)RoHS*Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 5.7 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

IRFI734G, SiHFI734GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450 High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 1.2 Sink to Lead Creepage Dist. 4.8 mmQg (Max.) (nC) 45 Dynamic dV/dtQgs (nC) 6.6 Low Thermal ResistanceQgd (nC) 24 Lead (Pb)-free Configuration SingleDESCRIPTIOND

IRFI744G, SiHFI744GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 450Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.63f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mmQgs (nC) 12 Dynamic dV/dt RatingQgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av

IRFI7536GPbF HEXFET Power MOSFET Applications VDSS 60V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 2.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 3.4mID 86A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capaci

StrongIRFET IRFI7446GPbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 40V BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.3m Resonant mode power supplies S OR-ing and redu

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI7440GFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI7446GFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI7536GFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(