IRFI720G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFI720G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI720G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm

Encapsulados: TO220F

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IRFI720G datasheet

..1. Size:170K international rectifier
irfi720g.pdf pdf_icon

..2. Size:1499K vishay
irfi720g sihfi720g.pdf pdf_icon

IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.8 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 3.3 Low Thermal Resistance Qgd (nC) 11 Lead (Pb)-fre

7.1. Size:116K 1
irfi720a irfw720a.pdf pdf_icon

7.2. Size:666K fairchild semi
irfw720b irfi720b.pdf pdf_icon

November 2001 IRFW720B / IRFI720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

9.1. Size:117K 1
irfi730a irfw730a.pdf pdf_icon

9.2. Size:220K 1
irfi740a irfw740a.pdf pdf_icon

9.3. Size:117K 1
irfi710a irfw710a.pdf pdf_icon

9.4. Size:221K international rectifier
irfi740glc.pdf pdf_icon

9.5. Size:988K international rectifier
irfi744gpbf.pdf pdf_icon

PD - 94855 IRFI744GPbF Lead-Free 11/19/03 Document Number 91157 www.vishay.com 1 IRFI744GPbF Document Number 91157 www.vishay.com 2 IRFI744GPbF Document Number 91157 www.vishay.com 3 IRFI744GPbF Document Number 91157 www.vishay.com 4 IRFI744GPbF Document Number 91157 www.vishay.com 5 IRFI744GPbF Document Number 91157 www.vishay.com 6 IRFI744GPbF Document Nu

9.6. Size:925K international rectifier
irfi740g.pdf pdf_icon

PD - 94854 IRFI740GPbF Lead-Free 11/19/03 Document Number 91156 www.vishay.com 1 IRFI740GPbF Document Number 91156 www.vishay.com 2 IRFI740GPbF Document Number 91156 www.vishay.com 3 IRFI740GPbF Document Number 91156 www.vishay.com 4 IRFI740GPbF Document Number 91156 www.vishay.com 5 IRFI740GPbF Document Number 91156 www.vishay.com 6 IRFI740GPbF TO-220 Full

9.7. Size:258K international rectifier
irfi734gpbf.pdf pdf_icon

PD- 95752 IRFI734GPbF Lead-Free 8/23/04 Document Number 91154 www.vishay.com 1 IRFI734GPbF Document Number 91154 www.vishay.com 2 IRFI734GPbF Document Number 91154 www.vishay.com 3 IRFI734GPbF Document Number 91154 www.vishay.com 4 IRFI734GPbF Document Number 91154 www.vishay.com 5 IRFI734GPbF Document Number 91154 www.vishay.com 6 IRFI734GPbF Peak Diode Re

9.8. Size:261K international rectifier
irfi744g.pdf pdf_icon

9.9. Size:540K international rectifier
irfi7440gpbf.pdf pdf_icon

StrongIRFET IRFI7440GPbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 2.5m Resonant mode power supplies S OR-ing and redu

9.10. Size:241K international rectifier
irfi734g.pdf pdf_icon

9.11. Size:566K international rectifier
irfi7446gpbf.pdf pdf_icon

StrongIRFET IRFI7446GPbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 40V BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.3m Resonant mode power supplies S OR-ing and redu

9.12. Size:917K international rectifier
irfi730g.pdf pdf_icon

PD - 94987 IRFI730GPbF Lead-Free 2/9/04 Document Number 91153 www.vishay.com 1 IRFI730GPbF Document Number 91153 www.vishay.com 2 IRFI730GPbF Document Number 91153 www.vishay.com 3 IRFI730GPbF Document Number 91153 www.vishay.com 4 IRFI730GPbF Document Number 91153 www.vishay.com 5 IRFI730GPbF Document Number 91153 www.vishay.com 6 IRFI730GPbF TO-220 Full-P

9.13. Size:679K fairchild semi
irfw740b irfi740b.pdf pdf_icon

November 2001 IRFW740B / IRFI740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to

9.14. Size:667K fairchild semi
irfw710b irfi710b.pdf pdf_icon

November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.7 nC) planar, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored t

9.15. Size:1583K vishay
irfi740g sihfi740g.pdf pdf_icon

IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Sin

9.16. Size:1709K vishay
irfi744gpbf.pdf pdf_icon

IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.63 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mm Qgs (nC) 12 Dynamic dV/dt Rating Qgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av

9.17. Size:1544K vishay
irfi730g sihfi730g.pdf pdf_icon

IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 5.7 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

9.18. Size:1296K vishay
irfi740glc sihfi740glc.pdf pdf_icon

IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* Isolated Package Qg (Max.) (nC) 39 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 10 f = 60 Hz) Qgd (nC) 19 Sink to Lead C

9.19. Size:846K vishay
irfi734gpbf.pdf pdf_icon

IRFI734G, SiHFI734G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = 10 V 1.2 Sink to Lead Creepage Dist. 4.8 mm Qg (Max.) (nC) 45 Dynamic dV/dt Qgs (nC) 6.6 Low Thermal Resistance Qgd (nC) 24 Lead (Pb)-free Configuration Single DESCRIPTION D

9.20. Size:1741K vishay
irfi744g sihfi744g.pdf pdf_icon

9.21. Size:602K infineon
irfi7536gpbf.pdf pdf_icon

IRFI7536GPbF HEXFET Power MOSFET Applications VDSS 60V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 2.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 3.4m ID 86A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capaci

9.22. Size:201K inchange semiconductor
irfi7440g.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7440G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(

9.23. Size:201K inchange semiconductor
irfi7446g.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7446G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(

9.24. Size:201K inchange semiconductor
irfi7536g.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7536G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(

Otros transistores... IRFI634A, IRFI634G, IRFI640A, IRFI640G, IRFI644A, IRFI644G, IRFI710A, IRFI720A, 75N75, IRFI730A, IRFI730G, IRFI734G, IRFI740A, IRFI740G, IRFI740GLC, IRFI744G, IRFI820A

IRFI720G Todos los transistores