AP15P10GI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP15P10GI
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AP15P10GI MOSFET
- Selecciónⓘ de transistores por parámetros
AP15P10GI datasheet
ap15p10gi.pdf
AP15P10GI Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID3 -8.3A G RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
ap15p10gh-hf ap15p10gj-hf.pdf
AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount app
ap15p10gh.pdf
AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology
ap15p10gp ap15p10gs.pdf
AP15P10GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) r
Otros transistores... AP20WN170I , AP20WN170H , AP20T15GI , AP1A003P , AP18P10AGJ , AP18P10AGH , AP16T10GH , AP15T15GH , IRFZ24N , AP14SL50W , AP14SL50I , AP14SL50H , AP13N50R , AP10TN9R0P , AP10TN6R0P , AP10TN6R0I , AP10TN135P .
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Recientemente añadidas las descripciónes de los transistores:
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