AP14SL50I Todos los transistores

 

AP14SL50I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP14SL50I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO220F

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AP14SL50I datasheet

 ..1. Size:217K  ape
 ap14sl50i.pdf pdf_icon

AP14SL50I

AP14SL50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic VDS @ Tj,max. 550V D Simple Drive Requirement RDS(ON) 0.28 RoHS Compliant & Halogen-Free ID 13A G S Description AP14SL50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-

 6.1. Size:222K  ape
 ap14sl50w.pdf pdf_icon

AP14SL50I

AP14SL50W-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 550V D Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID 13A G RoHS Compliant & Halogen-Free S Description AP14SL50 series are from Advanced Power innovated design and silicon process technology to achieve

 6.2. Size:236K  ape
 ap14sl50h.pdf pdf_icon

AP14SL50I

AP14SL50H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 550V D Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID 13A G RoHS Compliant & Halogen-Free S Description AP14SL50 series are from Advanced Power innovated design and G silicon process technology to achi

 9.1. Size:93K  ape
 ap14s50s-hf.pdf pdf_icon

AP14SL50I

AP14S50S-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 500V D Simple Drive Requirement RDS(ON) 0.27 RoHS Compliant & Halogen-Free ID 13.5A G S Description AP14S50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G D

MOSTRAR MÁS

Otros transistores... AP20T15GI , AP1A003P , AP18P10AGJ , AP18P10AGH , AP16T10GH , AP15T15GH , AP15P10GI , AP14SL50W , 8N60 , AP14SL50H , AP13N50R , AP10TN9R0P , AP10TN6R0P , AP10TN6R0I , AP10TN135P , AP10TN135JB , AP10TN135J .

History: UPA1804GR | MDF5N50FBTH | MEE3716T

 

 

 

 

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