AP14SL50I Todos los transistores

 

AP14SL50I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP14SL50I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO220F
 

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AP14SL50I Datasheet (PDF)

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 ap14sl50i.pdf pdf_icon

AP14SL50I

AP14SL50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic VDS @ Tj,max. 550VD Simple Drive Requirement RDS(ON) 0.28 RoHS Compliant & Halogen-Free ID 13AGSDescriptionAP14SL50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-

 6.1. Size:222K  ape
 ap14sl50w.pdf pdf_icon

AP14SL50I

AP14SL50W-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 550VD Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID 13AG RoHS Compliant & Halogen-FreeSDescriptionAP14SL50 series are from Advanced Power innovated design andsilicon process technology to achieve

 6.2. Size:236K  ape
 ap14sl50h.pdf pdf_icon

AP14SL50I

AP14SL50H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 550VD Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID 13AG RoHS Compliant & Halogen-FreeSDescriptionAP14SL50 series are from Advanced Power innovated design andGsilicon process technology to achi

 9.1. Size:93K  ape
 ap14s50s-hf.pdf pdf_icon

AP14SL50I

AP14S50S-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 RoHS Compliant & Halogen-Free ID 13.5AGSDescriptionAP14S50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GD

MOSTRAR MÁS

Otros transistores... AP20T15GI , AP1A003P , AP18P10AGJ , AP18P10AGH , AP16T10GH , AP15T15GH , AP15P10GI , AP14SL50W , K2611 , AP14SL50H , AP13N50R , AP10TN9R0P , AP10TN6R0P , AP10TN6R0I , AP10TN135P , AP10TN135JB , AP10TN135J .

History: BSP230 | STW13NK100Z | PNM8P30V12

 

 
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