AP10TN003R Todos los transistores

 

AP10TN003R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN003R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 180 nS
   Cossⓘ - Capacitancia de salida: 1730 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO262
 

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AP10TN003R Datasheet (PDF)

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 ap10tn003r.pdf pdf_icon

AP10TN003R

AP10TN003RHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Fast Switching Characteristic ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power inno

 5.1. Size:206K  ape
 ap10tn003p.pdf pdf_icon

AP10TN003R

AP10TN003PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Fast Switching Characteristic ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power inno

 5.2. Size:218K  ape
 ap10tn003i.pdf pdf_icon

AP10TN003R

AP10TN003IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 80AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power innovated

 5.3. Size:217K  ape
 ap10tn003s.pdf pdf_icon

AP10TN003R

AP10TN003SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power innovated

MOSTRAR MÁS

Otros transistores... AP10TN6R0I , AP10TN135P , AP10TN135JB , AP10TN135J , AP10TN135H , AP10TN040P , AP10TN040H , AP10TN003S , 8N60 , AP10TN003P , AP10TN003I , AP10P230H , AP10P10GJ , AP10N9R0R , AP10N9R0I , AP10N7R5H , AP10N6R0S .

History: MTM55N10 | HM4N90I | AONR66406 | 4N100G-TA3-T | PSMN3R8-30LL | 2SK3726-01MR

 

 
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