AP10P230H Todos los transistores

 

AP10P230H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10P230H
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: TO252
 

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AP10P230H Datasheet (PDF)

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 ap10p230h.pdf pdf_icon

AP10P230H

AP10P230HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -8.5AG RoHS Compliant & Halogen-FreeSDescriptionAP10P230 series are from Advanced Power innovated design and GDSsilicon process technology to achieve

 9.1. Size:101K  ape
 ap10p10gh j-hf.pdf pdf_icon

AP10P230H

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switch

 9.2. Size:201K  ape
 ap10p10gj.pdf pdf_icon

AP10P230H

AP10P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best GDScombination of fast switchi

 9.3. Size:54K  ape
 ap10p10gk-hf.pdf pdf_icon

AP10P230H

AP10P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100VD Lower Gate Charge RDS(ON) 500mS Fast Switching Characteristic ID - 1.65AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAP10P10 series are from Advanced Power innovated design and siliconprocess technology

MOSTRAR MÁS

Otros transistores... AP10TN135J , AP10TN135H , AP10TN040P , AP10TN040H , AP10TN003S , AP10TN003R , AP10TN003P , AP10TN003I , 2SK3918 , AP10P10GJ , AP10N9R0R , AP10N9R0I , AP10N7R5H , AP10N6R0S , AP10N4R5S , AP10N4R5P , AP10N4R5I .

 

 
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