AP10P230H Datasheet. Equivalente

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 ap10p230h.pdf

AP10P230H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -8.5A G RoHS Compliant & Halogen-Free S Description AP10P230 series are from Advanced Power innovated design and G D S silicon process technology to achieve

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 ap10p10gh j-hf.pdf

AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switch

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 ap10p10gj.pdf

AP10P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Lower Gate Charge RDS(ON) 500m Fast Switching Characteristic ID -5.7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best G D S combination of fast switchi

 9.3. Size:54K  ape
 ap10p10gk-hf.pdf

AP10P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100V D Lower Gate Charge RDS(ON) 500m S Fast Switching Characteristic ID - 1.65A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP10P10 series are from Advanced Power innovated design and silicon process technology

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 ap10p500n.pdf

AP10P500N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -100V D Small Package Outline RDS(ON) 0.5 Surface Mount Device ID - 1.2A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP10P500 series are from Advanced Power innovated design and silicon process technology to achieve the

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 ap10p10gh.pdf

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 ap10p10d.pdf

AP10P10D -100V P-Channel Enhancement Mode MOSFET Description The AP10P10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-10A DS D R

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 ap10p06msi.pdf

AP10P06MSI -60V P-Channel Enhancement Mode MOSFET Description The AP10N06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-10A DS D R

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 ap10p04d.pdf

AP10P04D -40V P-Channel Enhancement Mode MOSFET Description The AP10P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-10A DS D R