AP10N7R5H Todos los transistores

 

AP10N7R5H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10N7R5H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 97 nS
   Cossⓘ - Capacitancia de salida: 870 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: TO252
 

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AP10N7R5H Datasheet (PDF)

 ..1. Size:242K  ape
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AP10N7R5H

AP10N7R5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 7.5m Fast Switching Characteristic ID 78AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP10N7R5 series are from AdvancedPower innovate

 8.1. Size:189K  ape
ap10n70p.pdf pdf_icon

AP10N7R5H

AP10N70R/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applicati

 8.2. Size:172K  ape
ap10n70s.pdf pdf_icon

AP10N7R5H

AP10N70SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionAP10N70S is specially designed as main switching devices for universalGD90~265VAC off-line AC/DC converter applications. TO-263 type provid

 8.3. Size:189K  ape
ap10n70p-a.pdf pdf_icon

AP10N7R5H

AP10N70R/P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applica

Otros transistores... AP10TN003S , AP10TN003R , AP10TN003P , AP10TN003I , AP10P230H , AP10P10GJ , AP10N9R0R , AP10N9R0I , AO3407 , AP10N6R0S , AP10N4R5S , AP10N4R5P , AP10N4R5I , AP10N012P , AP10N012IN , AP10N012I , AP10N012H .

History: 2SK3413LS | 2SK30ATM | SSW65R080SFD3 | 2SK3355-Z

 

 
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