AP10N012P Todos los transistores

 

AP10N012P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10N012P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 710 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET AP10N012P

 

Principales características: AP10N012P

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 ap10n012p.pdf pdf_icon

AP10N012P

AP10N012P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated design

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 ap10n012in.pdf pdf_icon

AP10N012P

AP10N012IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi

 6.2. Size:219K  ape
 ap10n012i.pdf pdf_icon

AP10N012P

AP10N012I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desig

 6.3. Size:70K  ape
 ap10n012mt.pdf pdf_icon

AP10N012P

AP10N012MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43A G RoHS Compliant & Halogen-Free D S D D Description D AP10N012 series are from Advanced Power innovated design and silicon process technology to achieve the lo

MOSTRAR MÁS

Otros transistores... AP10P10GJ , AP10N9R0R , AP10N9R0I , AP10N7R5H , AP10N6R0S , AP10N4R5S , AP10N4R5P , AP10N4R5I , IRFZ44N , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ .

History: HM80N80B | F5N65C

 

 
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