AP10N012P Todos los transistores

 

AP10N012P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10N012P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 710 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: TO220
 

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AP10N012P Datasheet (PDF)

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AP10N012P

AP10N012PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated design

 6.1. Size:255K  ape
 ap10n012in.pdf pdf_icon

AP10N012P

AP10N012INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desi

 6.2. Size:219K  ape
 ap10n012i.pdf pdf_icon

AP10N012P

AP10N012IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desig

 6.3. Size:70K  ape
 ap10n012mt.pdf pdf_icon

AP10N012P

AP10N012MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10N012 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

MOSTRAR MÁS

Otros transistores... AP10P10GJ , AP10N9R0R , AP10N9R0I , AP10N7R5H , AP10N6R0S , AP10N4R5S , AP10N4R5P , AP10N4R5I , IRFZ44N , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ .

History: MDF18N50BTH | G1818 | OSG60R190FT3ZF

 

 
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