AP10N012H Todos los transistores

 

AP10N012H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10N012H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 710 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET AP10N012H

 

Principales características: AP10N012H

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 ap10n012h.pdf pdf_icon

AP10N012H

AP10N012H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48A G G RoHS Compliant & Halogen-Free S S Description G AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi

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 ap10n012in.pdf pdf_icon

AP10N012H

AP10N012IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi

 6.2. Size:219K  ape
 ap10n012i.pdf pdf_icon

AP10N012H

AP10N012I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desig

 6.3. Size:70K  ape
 ap10n012mt.pdf pdf_icon

AP10N012H

AP10N012MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43A G RoHS Compliant & Halogen-Free D S D D Description D AP10N012 series are from Advanced Power innovated design and silicon process technology to achieve the lo

MOSTRAR MÁS

Otros transistores... AP10N7R5H , AP10N6R0S , AP10N4R5S , AP10N4R5P , AP10N4R5I , AP10N012P , AP10N012IN , AP10N012I , IRF840 , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH , AP05N20GJ , AP05N20GI .

History: HM8810A | F740 | CM8N60 | SUP85N03-07P | HM85N02K | HM8P02MR | CM2N65C

 

 
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