AP02N60H-H-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP02N60H-H-HF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8.8 Ohm

Encapsulados: TO252

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AP02N60H-H-HF datasheet

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 ap02n60h-h-hf ap02n60j-h-hf.pdf pdf_icon

AP02N60H-H-HF

AP02N60H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700V D Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and

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 ap02n60h-h ap02n60j-h.pdf pdf_icon

AP02N60H-H-HF

AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4A G Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications

 4.2. Size:98K  ape
 ap02n60h-hf ap02n60j-hf.pdf pdf_icon

AP02N60H-H-HF

AP02N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC

 6.1. Size:102K  ape
 ap02n60h ap02n60j.pdf pdf_icon

AP02N60H-H-HF

AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The th

MOSTRAR MÁS

Otros transistores... AP01L60T-H, AP01L60H-A-HF, AP01L60H-H, AP01L60J-A-HF, AP01L60J-H, AP01L60T-HF, AP01N40J, AP02N60H-HF, 7N65, AP02N60J-HF, AP02N60J-H-HF, AP02N60P, AP02N60P-HF, AP02N70EJ-HF, AP02N90I-HF, AP03N70H-H-HF, AP03N70I-H-HF