AP1333GU-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP1333GU-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 25 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: SOT323
Búsqueda de reemplazo de AP1333GU-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP1333GU-HF datasheet
ap1333gu-hf.pdf
AP1333GU-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mA S RoHS Compliant & Halogen-Free SOT-323 G Description Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switchi
ap1333gu.pdf
AP1333GU RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 800m Fast Switching Characteristic ID -550mA S SOT-323 G Description Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, low on- resistance and cost-eff
ap1333gu.pdf
AP1333GU www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Convert
ap1332gev-hf.pdf
AP1332GEV-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D Gate Pateded Diode RDS(ON) 0.9 Small Package Outline ID 450mA S RoHS Compliant & Halogen-Free SC-75 G D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, low on-re
Otros transistores... AP1003BST , AP1004CMX , AP1005BSQ , AP10N70I-A , AP10P10GK-HF , AP11N50I-HF , AP1203GH , AP1203GM , TK10A60D , AP13N50W-HF , AP13P15GP , AP13P15GS , AP15N03GI , AP15N03GJ , AP15P10GP-HF , AP15P10GS-HF , AP15T03GJ .
History: AP2302N-HF | WSF4012 | SVT25600NT | CJQ4406 | MDP7N50 | SFS08R08DF
History: AP2302N-HF | WSF4012 | SVT25600NT | CJQ4406 | MDP7N50 | SFS08R08DF
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
bs170 datasheet | tip41c | irfp460 | irfz44n mosfet | lm317t datasheet | irf540 | bc337 | ksc1845
