IRFI820G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI820G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 2.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 8.6 nS
Cossⓘ - Capacitancia de salida: 92 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de IRFI820G MOSFET
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IRFI820G datasheet
..1. Size:1025K international rectifier
irfi820gpbf.pdf 
PD- 95522 IRFI820GPbF Lead-Free 07/08/04 Document Number 91158 www.vishay.com 1 IRFI820GPbF Document Number 91158 www.vishay.com 2 IRFI820GPbF Document Number 91158 www.vishay.com 3 IRFI820GPbF Document Number 91158 www.vishay.com 4 IRFI820GPbF Document Number 91158 www.vishay.com 5 IRFI820GPbF Document Number 91158 www.vishay.com 6 IRFI820GPbF Peak Diode R
..3. Size:1793K vishay
irfi820g sihfi820g.pdf
IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 Dynamic dV/dt Rating Qgd (nC) 13 Low Thermal Resistance Configuration Si
..4. Size:1783K vishay
irfi820gpbf sihfi820g.pdf
IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 Dynamic dV/dt Rating Qgd (nC) 13 Low Thermal Resistance Configuration Si
9.4. Size:1023K international rectifier
irfi840glcpbf.pdf
PD - 94865 IRFI840GLCPbF Lead-Free 12/4/03 Document Number 91160 www.vishay.com 1 IRFI840GLCPbF Document Number 91160 www.vishay.com 2 IRFI840GLCPbF Document Number 91160 www.vishay.com 3 IRFI840GLCPbF Document Number 91160 www.vishay.com 4 IRFI840GLCPbF Document Number 91160 www.vishay.com 5 IRFI840GLCPbF Document Number 91160 www.vishay.com 6 IRFI840GLCPbF
9.5. Size:1303K international rectifier
irfi840gpbf.pdf
PD - 94864 IRFI840GPbF Lead-Free www.irf.com 1 12/03/03 IRFI840GPbF 2 www.irf.com IRFI840GPbF www.irf.com 3 IRFI840GPbF 4 www.irf.com IRFI840GPbF www.irf.com 5 IRFI840GPbF 6 www.irf.com IRFI840GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XAMP L E T H IS IS AN IR F I84 0G WIT H AS S E
9.8. Size:1651K vishay
irfi840glcpbf sihfi840glc.pdf
IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Cr
9.9. Size:1649K vishay
irfi840glc sihfi840glc.pdf
IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Cr
9.10. Size:2785K vishay
irfi840g sihfi840g.pdf
IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s, RDS(on) ( )VGS = 10 V 0.85 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 34 Low Thermal Resistance Configuration Si
9.11. Size:1541K vishay
irfi830gpbf sihfi830g.pdf
IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free
9.12. Size:1540K vishay
irfi830g sihfi830g.pdf
IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free
9.13. Size:825K cn vbsemi
irfi840gpbf.pdf
IRFI840GPBF www.VBsemi.tw N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy rated (UIS) Qgd (nC) 5.4 Configur
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