AP15N03GI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP15N03GI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 107 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de AP15N03GI MOSFET
AP15N03GI Datasheet (PDF)
ap15n03gi.pdf

AP15N03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and
ap15n03ghj-hf.pdf

AP15N03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage a
ap15n03gj.pdf

AP15N03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AGSDescriptionGTO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage applicationssuch as
ap15n03gh.pdf

AP15N03GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15AG RoHS CompliantSDescriptionAP15N03 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDSTO-252(H)
Otros transistores... AP10P10GK-HF , AP11N50I-HF , AP1203GH , AP1203GM , AP1333GU-HF , AP13N50W-HF , AP13P15GP , AP13P15GS , STF13NM60N , AP15N03GJ , AP15P10GP-HF , AP15P10GS-HF , AP15T03GJ , AP15T25H-HF , AP16N50P-HF , AP16N50W-HF , AP1801GU .
History: PP4B10BS | WMS175DN10LG4 | WMS10DN04TS | KTHC5513 | SSP80R160S2 | VBFB16R04 | NTMFD6H846NLT1G
History: PP4B10BS | WMS175DN10LG4 | WMS10DN04TS | KTHC5513 | SSP80R160S2 | VBFB16R04 | NTMFD6H846NLT1G



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