IRFI830G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFI830G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET IRFI830G
IRFI830G Datasheet (PDF)
irfi830gpbf sihfi830g.pdf
IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free
irfi830g sihfi830g.pdf
IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free
irfi820gpbf.pdf
PD- 95522IRFI820GPbF Lead-Free07/08/04Document Number: 91158 www.vishay.com1IRFI820GPbFDocument Number: 91158 www.vishay.com2IRFI820GPbFDocument Number: 91158 www.vishay.com3IRFI820GPbFDocument Number: 91158 www.vishay.com4IRFI820GPbFDocument Number: 91158 www.vishay.com5IRFI820GPbFDocument Number: 91158 www.vishay.com6IRFI820GPbFPeak Diode R
irfi840glcpbf.pdf
PD - 94865IRFI840GLCPbF Lead-Free12/4/03Document Number: 91160 www.vishay.com1IRFI840GLCPbFDocument Number: 91160 www.vishay.com2IRFI840GLCPbFDocument Number: 91160 www.vishay.com3IRFI840GLCPbFDocument Number: 91160 www.vishay.com4IRFI840GLCPbFDocument Number: 91160 www.vishay.com5IRFI840GLCPbFDocument Number: 91160 www.vishay.com6IRFI840GLCPbF
irfi840gpbf.pdf
PD - 94864IRFI840GPbF Lead-Freewww.irf.com 112/03/03IRFI840GPbF2 www.irf.comIRFI840GPbFwww.irf.com 3IRFI840GPbF4 www.irf.comIRFI840GPbFwww.irf.com 5IRFI840GPbF6 www.irf.comIRFI840GPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationE XAMP L E : T H IS IS AN IR F I84 0G WIT H AS S E
irfi840glcpbf sihfi840glc.pdf
IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr
irfi820g sihfi820g.pdf
IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si
irfi820gpbf sihfi820g.pdf
IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si
irfi840glc sihfi840glc.pdf
IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr
irfi840g sihfi840g.pdf
IRFI840G, SiHFI840GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s,RDS(on) ()VGS = 10 V 0.85f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 34 Low Thermal ResistanceConfiguration Si
irfi840gpbf.pdf
IRFI840GPBFwww.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy rated (UIS)Qgd (nC) 5.4Configur
Otros transistores... IRFI734G , IRFI740A , IRFI740G , IRFI740GLC , IRFI744G , IRFI820A , IRFI820G , IRFI830A , AO4468 , IRFI840A , IRFI840G , IRFI840GLC , IRFI9520N , IRFI9530G , IRFI9540N , IRFI9620G , IRFI9630G .
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