AP6679GP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6679GP-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 960 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AP6679GP-HF MOSFET
AP6679GP-HF Datasheet (PDF)
ap6679gp-hf ap6679gs-hf.pdf

AP6679GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)r
ap6679gp-a ap6679gs-a.pdf

AP6679GS/P-APb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-
ap6679gp.pdf

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi
ap6679gs.pdf

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi
Otros transistores... AP18T10GH , AP18T10GJ , AP1A003GMT-HF , AP6679BGJ-HF , AP6679GH , AP6679GI , AP6679GJ , AP6679GP-A , IRFZ48N , AP6679GS , AP6679GS-A , AP6679GS-HF , AP6680AGM-HF , AP6680GM , AP6681GMT-HF , AP20N15AGI-HF , AP20P02GH .
History: DMN3135LVT | STW34N65M5 | AOD498 | BSR606N | VBZE04N03 | NVMFD5C462N | 7N65L-T2Q-T
History: DMN3135LVT | STW34N65M5 | AOD498 | BSR606N | VBZE04N03 | NVMFD5C462N | 7N65L-T2Q-T



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