IRFI840A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFI840A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 142 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO262

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IRFI840A Datasheet (PDF)

..1. Size:195K 1
irfi840a irfw840a.pdf

7.1. Size:225K international rectifier
irfi840glc.pdf

7.2. Size:1023K international rectifier
irfi840glcpbf.pdf

PD - 94865IRFI840GLCPbF Lead-Free12/4/03Document Number: 91160 www.vishay.com1IRFI840GLCPbFDocument Number: 91160 www.vishay.com2IRFI840GLCPbFDocument Number: 91160 www.vishay.com3IRFI840GLCPbFDocument Number: 91160 www.vishay.com4IRFI840GLCPbFDocument Number: 91160 www.vishay.com5IRFI840GLCPbFDocument Number: 91160 www.vishay.com6IRFI840GLCPbF

7.3. Size:1303K international rectifier
irfi840gpbf.pdf

PD - 94864IRFI840GPbF Lead-Freewww.irf.com 112/03/03IRFI840GPbF2 www.irf.comIRFI840GPbFwww.irf.com 3IRFI840GPbF4 www.irf.comIRFI840GPbFwww.irf.com 5IRFI840GPbF6 www.irf.comIRFI840GPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationE XAMP L E : T H IS IS AN IR F I84 0G WIT H AS S E

7.4. Size:169K international rectifier
irfi840g.pdf

7.5. Size:1651K vishay
irfi840glcpbf sihfi840glc.pdf

IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr

7.6. Size:1649K vishay
irfi840glc sihfi840glc.pdf

7.7. Size:2785K vishay
irfi840g sihfi840g.pdf

IRFI840G, SiHFI840GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s,RDS(on) ()VGS = 10 V 0.85f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 34 Low Thermal ResistanceConfiguration Si

7.8. Size:825K cn vbsemi
irfi840gpbf.pdf

IRFI840GPBFwww.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy rated (UIS)Qgd (nC) 5.4Configur

Otros transistores... IRFI740A , IRFI740G , IRFI740GLC , IRFI744G , IRFI820A , IRFI820G , IRFI830A , IRFI830G , EMB04N03H , IRFI840G , IRFI840GLC , IRFI9520N , IRFI9530G , IRFI9540N , IRFI9620G , IRFI9630G , IRFI9634G .

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