AP2301EN-HF Todos los transistores

 

AP2301EN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2301EN-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: SOT23S

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AP2301EN-HF datasheet

 ..1. Size:96K  ape
ap2301en-hf.pdf pdf_icon

AP2301EN-HF

AP2301EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switch

 6.1. Size:150K  ape
ap2301en.pdf pdf_icon

AP2301EN-HF

AP2301EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switch

 8.1. Size:93K  ape
ap2301agn.pdf pdf_icon

AP2301EN-HF

AP2301AGN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 97m D Surface Mount Device ID - 3.3A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

 8.2. Size:56K  ape
ap2301agn-hf.pdf pdf_icon

AP2301EN-HF

AP2301AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 97m Surface Mount Device ID - 3.3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,l

Otros transistores... AP6680AGM-HF , AP6680GM , AP6681GMT-HF , AP20N15AGI-HF , AP20P02GH , AP20P02GJ , AP20T15GM-HF , AP2301AGN , RU7088R , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN , AP2306GN , AP2309GN , AP2310GN .

History: AP9563GK-HF | AP5322GM | AP6P250N | AP9970GK | CJK3400AH | AP6985GN2-HF | AP6900GH-HF

 

 

 

 

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