AP2309GN Todos los transistores

 

AP2309GN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2309GN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 91 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SOT23

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AP2309GN datasheet

 ..1. Size:72K  ape
 ap2309gn.pdf pdf_icon

AP2309GN

AP2309GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75m D Surface Mount Device ID - 3.7A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and G cost-effect

 0.1. Size:108K  ape
 ap2309gn-hf.pdf pdf_icon

AP2309GN

AP2309GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 75m D Surface Mount Device ID - 3.7A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistanc

 7.1. Size:148K  ape
 ap2309gen.pdf pdf_icon

AP2309GN

AP2309GEN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2309 series are from Advanced Power innovated design and silicon G process technology to achieve the

 7.2. Size:97K  ape
 ap2309gen-hf.pdf pdf_icon

AP2309GN

AP2309GEN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 52m Surface Mount Device ID - 4.2A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2309 series are from Advanced Power innovated design and silicon G process technology to achieve

MOSTRAR MÁS

Otros transistores... AP2301AGN , AP2301EN-HF , AP2301GN , AP2302GN , AP2302N-HF , AP2303GN , AP2305AGN , AP2306GN , IRF730 , AP2310GN , AP2313GN , AP2320GN-HF , AP2320N-HF , AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF , AP2336GN-HF .

History: HY1506I | AP9475GM | 2SK1443 | AP4024EM | AP2045Q | AP3N028EN

 

 

 

 

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