AP2325GEU6-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP2325GEU6-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
   Paquete / Cubierta: SOT363

Búsqueda de reemplazo de MOSFET AP2325GEU6-HF

AP2325GEU6-HF Datasheet (PDF)

..1. Size:93K ape
ap2325geu6-hf.pdf

AP2325GEU6-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -20VDD Small Package Outline RDS(ON) 145mG Surface Mount Device ID -1.8ADDSOT-363 RoHS Compliant & Halogen-FreeDDescriptionAP2325 series are from Advanced Power innovated design andGsilicon process technology

6.1. Size:147K ape
ap2325gen.pdf

AP2325GENHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,

6.2. Size:59K ape
ap2325gen-hf.pdf

AP2325GEN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,

9.1. Size:94K ape
ap2328gn-hf.pdf

AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

9.2. Size:144K ape
ap2326gn.pdf

AP2326GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2326 series are from Advanced Power innovated design andsilicon process technology to achieve

9.3. Size:55K ape
ap2321gn-hf.pdf

AP2321GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

9.4. Size:56K ape
ap2329gn-hf.pdf

AP2329GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 48m Surface Mount Device ID - 4.3AS RoHS Compliant & Halogen-FreeSOT-23GDescription DAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, lo

9.5. Size:94K ape
ap2326gn-hf.pdf

AP2326GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

9.6. Size:146K ape
ap2320gn.pdf

AP2320GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

9.7. Size:95K ape
ap2323gn-hf.pdf

AP2323GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

9.8. Size:181K ape
ap2323gn.pdf

9.9. Size:182K ape
ap2322gn.pdf

AP2322GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Small Package Outline RDS(ON) 90m Surface Mount Package ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resis

9.10. Size:55K ape
ap2320n-hf.pdf

AP2320N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

9.11. Size:147K ape
ap2321gn.pdf

AP2321GNHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VD Small Package Outline RDS(ON) 90m Surface Mount Device ID -3.1AS RoHS Compliant & Halogen-FreeSOT-23SGDescription DAP2321 series are from Advanced Power innovated design and siliconprocess technology to achieve the low

9.12. Size:90K ape
ap2322gn-hf.pdf

AP2322GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V gate drive BVDSS 20VD Simple Drive Requirement RDS(ON) 90m Surface mount package ID 2.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible

9.13. Size:54K ape
ap2320gn-hf.pdf

AP2320GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resist

9.14. Size:94K ape
ap2324gn-hf.pdf

AP2324GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VD Lower Gate Charge RDS(ON) 25m Surface mount package ID 6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistanc

9.15. Size:55K ape
ap2327gn-hf.pdf

AP2327GN-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 37m Surface Mount Device ID - 5.1AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provid

9.16. Size:179K ape
ap2323agn.pdf

AP2323AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.5V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38m Surface Mount Device ID -5AS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAP2323A series are from Advanced Power innovated design andsilicon process technology to achieve the

9.17. Size:176K ape
ap2328gn.pdf

AP2328GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 60m Surface Mount Device ID 4AS Halogen Free & RoHS Compliant ProductSOT-23 GDDescriptionAP2328 series are from Advanced Power innovated design andsilicon process technology to achieve

9.18. Size:1302K kexin
ap2322gn-3.pdf

SMD Type MOSFETN-Channel MOSFETAP2322GN (KP2322GN)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 2.5 A1 2 RDS(ON) 90m (VGS = 4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V)1. Gate2. Source3. DrainDGS Absolute Maximum Rating

9.19. Size:1154K kexin
ap2322gn.pdf

SMD Type MOSFETN-Channel MOSFETAP2322GN (KP2322GN)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 2.5 A1 2+0.1+0.050.95 -0.1 RDS(ON) 90m (VGS = 4.5V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 120m (VGS = 2.5V) RDS(ON) 150m (VGS = 1.8V)1. Gate2. Source3. DrainDGS Absolute Maximum Ratings Ta

9.20. Size:847K cn vbsemi
ap2321gn.pdf

AP2321GNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

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