AP2325GEU6-HF Todos los transistores

 

AP2325GEU6-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2325GEU6-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.74 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 1.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm

Encapsulados: SOT363

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AP2325GEU6-HF datasheet

 ..1. Size:93K  ape
ap2325geu6-hf.pdf pdf_icon

AP2325GEU6-HF

AP2325GEU6-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS -20V D D Small Package Outline RDS(ON) 145m G Surface Mount Device ID -1.8A D D SOT-363 RoHS Compliant & Halogen-Free D Description AP2325 series are from Advanced Power innovated design and G silicon process technology

 6.1. Size:147K  ape
ap2325gen.pdf pdf_icon

AP2325GEU6-HF

AP2325GEN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,

 6.2. Size:59K  ape
ap2325gen-hf.pdf pdf_icon

AP2325GEU6-HF

AP2325GEN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 90m Surface Mount Device ID - 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,

 9.1. Size:94K  ape
ap2328gn-hf.pdf pdf_icon

AP2325GEU6-HF

AP2328GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 60m Surface Mount Device ID 4A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible

Otros transistores... AP2305AGN , AP2306GN , AP2309GN , AP2310GN , AP2313GN , AP2320GN-HF , AP2320N-HF , AP2322GN-HF , IRF540N , AP2333EN-HF , AP2336GN-HF , AP2340GN-HF , AP2346GN-HF , AP2451GY , AP2531GY-HF , AP25T03GJ , AP2602GY-HF .

History: 2SK3047 | APM9904K | AO4407C | ME2326A

 

 

 

 

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