AP2336GN-HF Todos los transistores

 

AP2336GN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2336GN-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.5 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SOT23

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AP2336GN-HF datasheet

 ..1. Size:93K  ape
 ap2336gn-hf.pdf pdf_icon

AP2336GN-HF

AP2336GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext

 9.1. Size:175K  ape
 ap2330gn.pdf pdf_icon

AP2336GN-HF

AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7A G RoHS Compliant & Halogen-Free S D Description AP2330 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

 9.2. Size:177K  ape
 ap2338gn.pdf pdf_icon

AP2336GN-HF

AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2338 series are from Advanced Power innovated design and silicon process technology to achieve

 9.3. Size:56K  ape
 ap2332gen-hf.pdf pdf_icon

AP2336GN-HF

AP2332GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 72 Surface Mount Device ID 51mA S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing G techniques to achieve the lowest possibl

MOSTRAR MÁS

Otros transistores... AP2309GN , AP2310GN , AP2313GN , AP2320GN-HF , AP2320N-HF , AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF , 50N06 , AP2340GN-HF , AP2346GN-HF , AP2451GY , AP2531GY-HF , AP25T03GJ , AP2602GY-HF , AP2603GY , AP2605GY-HF .

History: LSC65R280HT | CJMPD11

 

 

 

 

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