AP2340GN-HF Todos los transistores

 

AP2340GN-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2340GN-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 3.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOT23

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AP2340GN-HF datasheet

 ..1. Size:56K  ape
 ap2340gn-hf.pdf pdf_icon

AP2340GN-HF

AP2340GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30V D Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID 3.4A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest

 9.1. Size:57K  ape
 ap2344gen-hf.pdf pdf_icon

AP2340GN-HF

AP2344GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 23m Fast Switching Performance ID 6.2A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2344 series are from Advanced Power innovated design and silicon G process technology to achiev

 9.2. Size:55K  ape
 ap2346gn-hf.pdf pdf_icon

AP2340GN-HF

AP2346GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2346 series are from Advanced Power innovated design and silicon process technology to achieve th

 9.3. Size:61K  ape
 ap2342gk-hf.pdf pdf_icon

AP2340GN-HF

AP2342GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 2 S Fast Switching Characteristic ID 590mA D RoHS Compliant & Halogen-Free SOT-223 G D Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast swit

MOSTRAR MÁS

Otros transistores... AP2310GN , AP2313GN , AP2320GN-HF , AP2320N-HF , AP2322GN-HF , AP2325GEU6-HF , AP2333EN-HF , AP2336GN-HF , IRFP460 , AP2346GN-HF , AP2451GY , AP2531GY-HF , AP25T03GJ , AP2602GY-HF , AP2603GY , AP2605GY-HF , AP2611GY-HF .

History: BLM2010E | SSM3K72KFS | LSD80R980GT | SI1046R | AP9922GEO | 2SK2167 | 2SK2218

 

 

 

 

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