AP2611GY-HF Todos los transistores

 

AP2611GY-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2611GY-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: SOT26

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AP2611GY-HF datasheet

 ..1. Size:58K  ape
ap2611gy-hf.pdf pdf_icon

AP2611GY-HF

AP2611GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Small Package Outline RDS(ON) 500m Surface Mount Device ID - 1.4A G RoHS Compliant & Halogen-Free S S D Description D AP2611 series are from Advanced Power innovated design and silicon G process technology to achieve t

 6.1. Size:56K  ape
ap2611gyt-hf.pdf pdf_icon

AP2611GY-HF

AP2611GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device d

 9.1. Size:96K  ape
ap2612gy-hf.pdf pdf_icon

AP2611GY-HF

AP2612GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 1.8V Gate Drive BVDSS 30V D D Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6A G D RoHS Compliant D SOT-26 Description Advanced Power MOSFETs utilized advanced processing techniques D to achieve the lowest possible on-resistanc

 9.2. Size:93K  ape
ap2615gy-hf.pdf pdf_icon

AP2611GY-HF

AP2615GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5A G RoHS Compliant & Halogen-Free S S D Description D AP2615 series are from Advanced Power innovated design and silicon G process technology

Otros transistores... AP2340GN-HF , AP2346GN-HF , AP2451GY , AP2531GY-HF , AP25T03GJ , AP2602GY-HF , AP2603GY , AP2605GY-HF , AO3400 , AP2623GY-HF , AP2625GY-HF , AP2732GK-HF , AP2761I-A-HF , AP2762I-A , AP2764AP-A , AP2764I-A-HF , AP2R803GH .

 

 

 


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