AP2625GY-HF Todos los transistores

 

AP2625GY-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2625GY-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 42 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm

Encapsulados: SOT26

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AP2625GY-HF datasheet

 ..1. Size:59K  ape
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AP2625GY-HF

AP2625GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS -30V S1 D1 Capable of 2.5V Gate Drive RDS(ON) 185m G2 Surface Mount Package ID - 2A S2 SOT-26 RoHS Compliant & Halogen-Free G1 Description D2 D1 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest

 6.1. Size:96K  ape
ap2625gy.pdf pdf_icon

AP2625GY-HF

AP2625GY RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D2 D1 Low Gate Drive RDS(ON) 185m Surface Mount Package ID - 2A G2 G1 S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques D1 to achieve the lowest possible on-resistance, extremely efficient and G2

 9.1. Size:97K  ape
ap2623gy-hf.pdf pdf_icon

AP2625GY-HF

AP2623GY-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge BVDSS -30V S1 D1 Low On-resistance RDS(ON) 170m G2 Surface Mount Package ID - 2A S2 RoHS Compliant & Halogen-Free SOT-26 G1 Description D2 D1 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest poss

 9.2. Size:97K  ape
ap2622gy-hf.pdf pdf_icon

AP2625GY-HF

AP2622GY-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D1 Low Gate Charge D2 BVDSS 50V Small Package Outline RDS(ON) 1.8 G1 G2 Surface Mount Package ID 520mA RoHS Compliant S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to S1 achieve the lowest possible on-resistance, extre

Otros transistores... AP2451GY , AP2531GY-HF , AP25T03GJ , AP2602GY-HF , AP2603GY , AP2605GY-HF , AP2611GY-HF , AP2623GY-HF , IRF3710 , AP2732GK-HF , AP2761I-A-HF , AP2762I-A , AP2764AP-A , AP2764I-A-HF , AP2R803GH , AP2R803GM-HF , AP2R803GS-HF .

History: STF19NM65N

 

 

 


History: STF19NM65N

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