AP40N03GJ-HF Todos los transistores

 

AP40N03GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP40N03GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 380 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: TO251

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AP40N03GJ-HF datasheet

 ..1. Size:97K  ape
 ap40n03gh-hf ap40n03gj-hf.pdf pdf_icon

AP40N03GJ-HF

AP40N03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID 36A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S

 6.1. Size:94K  ape
 ap40n03gp-hf.pdf pdf_icon

AP40N03GJ-HF

AP40N03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-Free G TO-220 D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 6.2. Size:95K  ape
 ap40n03gp.pdf pdf_icon

AP40N03GJ-HF

AP40N03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D TO-220 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-r

 6.3. Size:126K  ape
 ap40n03gs.pdf pdf_icon

AP40N03GJ-HF

AP40N03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D S TO-263 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res

MOSTRAR MÁS

Otros transistores... AP3801GM-HF , AP3989I-HF , AP3R604GH , AP4002H-HF , AP4002J-HF , AP4002T , AP4036AGM-HF , AP40N03GH-HF , K3569 , AP40N03GP-HF , AP40P03GH-HF , AP40P03GJ-HF , AP40T03GH-HF , AP40T03GI-HF , AP40T03GJ-HF , AP40T03GP-HF , AP40T03GS-HF .

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