AP40T03GS-HF Todos los transistores

 

AP40T03GS-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP40T03GS-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO263

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AP40T03GS-HF datasheet

 ..1. Size:97K  ape
 ap40t03gp-hf ap40t03gs-hf.pdf pdf_icon

AP40T03GS-HF

AP40T03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching Characteristic ID 28A G RoHS Compliant & Halogen-Free S Description The Advanced Power MOSFETs APEC provide the Advanced Power MOSFETs fromfrom APEC provide the G designer wit

 6.1. Size:97K  ape
 ap40t03gi.pdf pdf_icon

AP40T03GS-HF

AP40T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D D Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28A G G S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 6.2. Size:96K  ape
 ap40t03gi-hf.pdf pdf_icon

AP40T03GS-HF

AP40T03GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de

 6.3. Size:214K  ape
 ap40t03gj.pdf pdf_icon

AP40T03GS-HF

AP40T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching ID 28A G S Description G Advanced Power MOSFETs from APEC provide the D TO-252(H) S designer with the best combination of fast switching, ruggedized device design, low on-resista

MOSTRAR MÁS

Otros transistores... AP40N03GJ-HF , AP40N03GP-HF , AP40P03GH-HF , AP40P03GJ-HF , AP40T03GH-HF , AP40T03GI-HF , AP40T03GJ-HF , AP40T03GP-HF , 12N60 , AP40U03GH , AP4224GM-HF , AP4226AGM-HF , AP4226GM-HF , AP4228GM-HF , AP4407GP-HF , AP4407GS-HF , AP4407S .

 

 

 


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