AP4224GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4224GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: SO8
- Selección de transistores por parámetros
AP4224GM-HF Datasheet (PDF)
ap4224gm-hf.pdf

AP4224GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 14mD1 Dual N MOSFET Package ID 10AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combinat
ap4224gm.pdf

AP4224GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 14mD1D1 Dual N MOSFET Package ID 10AG2 RoHS CompliantS2G1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast swit
ap4224lgm-hf-pre.pdf

AP4224LGM-HFPreliminaryAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 14mD1 Dual N MOSFET Package ID 10AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide the designerD2D1with the best combination of
ap4224lgm.pdf

AP4224LGMHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 24mD1 Dual N MOSFET Package ID 7.1AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP4224 series are from Advanced Power innovated design andD2D1silicon process
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: AONS36316 | RQK0608BQDQS | 4N65KG-T60-K | MRF5003 | CSD17309Q3 | IRFR120TR
History: AONS36316 | RQK0608BQDQS | 4N65KG-T60-K | MRF5003 | CSD17309Q3 | IRFR120TR



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