AP4226AGM-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4226AGM-HF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: SO8

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AP4226AGM-HF datasheet

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 ap4226agm-hf.pdf pdf_icon

AP4226AGM-HF

AP4226AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V Simple Drive Requirement RDS(ON) 18m Dual N MOSFET Package ID 8.7A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 designer with the best combination of fast switching,

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AP4226AGM-HF

AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 18m D1 Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 8.1. Size:71K  ape
 ap4226gm.pdf pdf_icon

AP4226AGM-HF

AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 18m D1 Dual N MOSFET Package ID 8.2A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the bes

 8.2. Size:57K  ape
 ap4226gm-hf.pdf pdf_icon

AP4226AGM-HF

AP4226GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 D1 Simple Drive Requirement RDS(ON) 18m D1 Dual N MOSFET Package ID 8.2A G2 S2 RoHS Compliant G1 S1 SO-8 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi

MOSTRAR MÁS

Otros transistores... AP40P03GJ-HF, AP40T03GH-HF, AP40T03GI-HF, AP40T03GJ-HF, AP40T03GP-HF, AP40T03GS-HF, AP40U03GH, AP4224GM-HF, AON7506, AP4226GM-HF, AP4228GM-HF, AP4407GP-HF, AP4407GS-HF, AP4407S, AP4409AGEH-HF, AP4409AGEM-HF, AP4409AGM-HF