AP9994GP-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9994GP-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 1020 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00295 Ohm

Encapsulados: TO220

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AP9994GP-HF datasheet

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 ap9994gp-hf.pdf pdf_icon

AP9994GP-HF

AP9994GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.95m Fast Switching Characteristic ID 215A G RoHS Compliant & Halogen-Free S Description AP9994 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

 8.1. Size:56K  ape
 ap9994agp-hf.pdf pdf_icon

AP9994GP-HF

AP9994AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.6m Fast Switching Characteristic ID 190A G RoHS Compliant & Halogen-Free S Description AP9994 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

 9.1. Size:54K  ape
 ap9995gh j-hf.pdf pdf_icon

AP9994GP-HF

AP9995GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Lower Gate Chage RDS(ON) 240m Fast Switching Characteristic ID 7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the desi

 9.2. Size:182K  ape
 ap9997gm.pdf pdf_icon

AP9994GP-HF

AP9997GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95V D2 D2 Single Drive Requirement RDS(ON) 110m D1 D1 Surface Mount Package ID 3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, rugge

MOSTRAR MÁS

Otros transistores... AP4407GP-HF, AP4407GS-HF, AP4407S, AP4409AGEH-HF, AP4409AGEM-HF, AP4409AGM-HF, AP9990GI-HF, AP9994AGP-HF, 4N60, AP9997GK-HF, AP9997GP, AP9998GI-HF, AP99LT06GI-HF, AP99LT06GP-HF, AP99LT06GS-HF, AP99T03GR-HF, AP9T15GH-HF