AP4410AGM-HF Todos los transistores

 

AP4410AGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4410AGM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2.5 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 7 nS
   Conductancia de drenaje-sustrato (Cd): 155 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0135 Ohm
   Paquete / Cubierta: SO8

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AP4410AGM-HF Datasheet (PDF)

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ap4410agm-hf.pdf

AP4410AGM-HF
AP4410AGM-HF

AP4410AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 13.5mDD Fast Switching Characteristic ID 10AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of

 5.1. Size:57K  ape
ap4410agm.pdf

AP4410AGM-HF
AP4410AGM-HF

AP4410AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 13.5mDD Fast Switching Characteristic ID 10AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d

 8.1. Size:89K  ape
ap4410m.pdf

AP4410AGM-HF
AP4410AGM-HF

AP4410MAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 30V DDFast Switching D RDS(ON) 13.5m DSimple Drive Requirement ID 10A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

 8.2. Size:202K  ape
ap4410gm.pdf

AP4410AGM-HF
AP4410AGM-HF

AP4410GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VDD Fast Switching D RDS(ON) 13.5mD Simple Drive Requirement ID 10AGSSSO-8SDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-

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History: TPH3R70APL | VBZM8N60 | DMG4N60SCT

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