AP4413GM-HF Todos los transistores

 

AP4413GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4413GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET AP4413GM-HF

 

Principales características: AP4413GM-HF

 ..1. Size:95K  ape
 ap4413gm-hf.pdf pdf_icon

AP4413GM-HF

AP4413GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D D D Low On-resistance RDS(ON) 30m D Fast Switching Characteristic ID -7.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of

 6.1. Size:70K  ape
 ap4413gm.pdf pdf_icon

AP4413GM-HF

AP4413GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D D Low On-resistance D RDS(ON) 30m D Fast Switching Characteristic ID -7.8A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the bes

 9.1. Size:70K  ape
 ap4411gm.pdf pdf_icon

AP4413GM-HF

AP4411GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 25m D Fast Switching ID -8.2A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of

 9.2. Size:67K  ape
 ap4412gm.pdf pdf_icon

AP4413GM-HF

AP4412GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 25V D D Simple Drive Requirement RDS(ON) 33m D D Fast Switching ID 7A G RoHS Compliant S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi

MOSTRAR MÁS

Otros transistores... AP99LT06GP-HF , AP99LT06GS-HF , AP99T03GR-HF , AP9T15GH-HF , AP9T15GJ-HF , AP9U18GH , AP4410AGM-HF , AP4411GM-HF , STF13NM60N , AP4415GH-HF , AP4415GJ-HF , AP4424GM-HF , AP4433GH-HF , AP4433GI-HF , AP4434GM-HF , AP4435GH , AP4435GJ .

History: AP4430GM | MTP4N90 | SIHFS9N60A | ZVNL110ASTOB | PSMN6R4-30MLD | IPA60R180P7S | PTF8N65

 

 
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