AP4424GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4424GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 13.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 9 nS
Cossⓘ - Capacitancia de salida: 410 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP4424GM-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP4424GM-HF datasheet
..1. Size:96K ape
ap4424gm-hf.pdf 
AP4424GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Low On-resistance RDS(ON) 9m D Fast Switching Characteristic ID 13.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
6.1. Size:219K ape
ap4424gm.pdf
AP4424GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Low On-resistance RDS(ON) 9m D Fast Switching Characteristic ID 13.8A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
8.1. Size:93K ape
ap4424agm.pdf
AP4424AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
9.1. Size:171K ape
ap4423gm.pdf
AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 15m D Fast Switching Characteristic ID -11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4423 series are from
9.2. Size:60K ape
ap4426gm-hf.pdf
AP4426GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6.5m D Low On-resistance ID 16A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.3. Size:93K ape
ap4429gm-hf.pdf
AP4429GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 5m D Fast Switching Characteristic ID 18A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o
9.4. Size:118K ape
ap4425go.pdf
AP4425GO RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Small & Thin Package D BVDSS -20V S S D Fast Switching Characteristic RDS(ON) 42m G S Capable of 1.8V Gate Drive ID -4.2A S TSSOP-8 D D Description G The Advanced Power MOSFETs from APEC provide the S designer with the best combination of fast switching, ru
9.5. Size:247K ape
ap4428gm.pdf
AP4428GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6m D Low On-resistance ID 16A G S S S SO-8 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de
9.6. Size:197K ape
ap4427gm.pdf
AP4427GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35V D D D Fast Switching Characteristic RDS(ON) 6.6m D RoHS Compliant ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device des
9.7. Size:96K ape
ap4423gm-hf.pdf
AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 15m D Fast Switching Characteristic ID -11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f
9.8. Size:170K ape
ap4426gm.pdf
AP4426GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6.5m D Low On-resistance ID 16A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4426 series are from A
9.9. Size:93K ape
ap4420gh ap4420gj.pdf
AP4420GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 35V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 52A S RoHS Compliant Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H
9.10. Size:197K ape
ap4425gm.pdf
AP4425GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35V D D D Fast Switching Characteristic RDS(ON) 9m D RoHS Compliant ID 13A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,
Otros transistores... AP9T15GH-HF, AP9T15GJ-HF, AP9U18GH, AP4410AGM-HF, AP4411GM-HF, AP4413GM-HF, AP4415GH-HF, AP4415GJ-HF, 8N60, AP4433GH-HF, AP4433GI-HF, AP4434GM-HF, AP4435GH, AP4435GJ, AP4453AGYT-HF, AP4501AGM, AP4501GM-HF
