AP4435GJ Todos los transistores

 

AP4435GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4435GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO251
 

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AP4435GJ Datasheet (PDF)

 ..1. Size:214K  ape
 ap4435gh ap4435gj.pdf pdf_icon

AP4435GJ

AP4435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AGSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDS TO-252(H)surface mount applications and suited for low voltag

 ..2. Size:819K  cn vbsemi
 ap4435gj.pdf pdf_icon

AP4435GJ

AP4435GJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.022 at VGS = - 4.5 V - 35APPLICATIONSTO-251 Load SwitchS Battery SwitchGDP-Channel MOSFETG D STop

 0.1. Size:100K  ape
 ap4435gh-hf ap4435gj-hf.pdf pdf_icon

AP4435GJ

AP4435GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

 7.1. Size:202K  ape
 ap4435gm-hf.pdf pdf_icon

AP4435GJ

AP4435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 20mD Fast Switching Characteristic ID -9AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP4413GM-HF , AP4415GH-HF , AP4415GJ-HF , AP4424GM-HF , AP4433GH-HF , AP4433GI-HF , AP4434GM-HF , AP4435GH , STP65NF06 , AP4453AGYT-HF , AP4501AGM , AP4501GM-HF , AP4502GM-HF , AP4503GM-HF , AP4511GED , AP4511GH-HF , AP4525GEH-HF .

History: IPI037N08N3G | NP80N055CHE | VBZE60N02 | IPZ65R095C7 | UTT25P10G-TF3-T | AOT2142L | RSL020P03FRA

 

 
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