AP4435GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4435GJ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 64 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO251

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AP4435GJ datasheet

 ..1. Size:214K  ape
 ap4435gh ap4435gj.pdf pdf_icon

AP4435GJ

AP4435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltag

 ..2. Size:819K  cn vbsemi
 ap4435gj.pdf pdf_icon

AP4435GJ

AP4435GJ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.022 at VGS = - 4.5 V - 35 APPLICATIONS TO-251 Load Switch S Battery Switch G D P-Channel MOSFET G D S Top

 0.1. Size:100K  ape
 ap4435gh-hf ap4435gj-hf.pdf pdf_icon

AP4435GJ

AP4435GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 7.1. Size:202K  ape
 ap4435gm-hf.pdf pdf_icon

AP4435GJ

AP4435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 20m D Fast Switching Characteristic ID -9A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP4413GM-HF, AP4415GH-HF, AP4415GJ-HF, AP4424GM-HF, AP4433GH-HF, AP4433GI-HF, AP4434GM-HF, AP4435GH, STP65NF06, AP4453AGYT-HF, AP4501AGM, AP4501GM-HF, AP4502GM-HF, AP4503GM-HF, AP4511GED, AP4511GH-HF, AP4525GEH-HF