AP4453AGYT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4453AGYT-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 12.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: PMPAK3X3

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AP4453AGYT-HF datasheet

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ap4453agyt-hf.pdf pdf_icon

AP4453AGYT-HF

AP4453AGYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8A G S D D Description D AP4453A series are from Advanced Power innovated design and D silicon process technology to achieve the lowest possible o

 8.1. Size:150K  1
ap4453gyt.pdf pdf_icon

AP4453AGYT-HF

AP4453GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device desi

 8.2. Size:150K  ape
ap4453gyt.pdf pdf_icon

AP4453AGYT-HF

AP4453GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device desi

 8.3. Size:205K  ape
ap4453h.pdf pdf_icon

AP4453AGYT-HF

AP4453H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID -29.5A G RoHS Compliant & Halogen-Free S Description AP4453 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lo

Otros transistores... AP4415GH-HF, AP4415GJ-HF, AP4424GM-HF, AP4433GH-HF, AP4433GI-HF, AP4434GM-HF, AP4435GH, AP4435GJ, IRF1405, AP4501AGM, AP4501GM-HF, AP4502GM-HF, AP4503GM-HF, AP4511GED, AP4511GH-HF, AP4525GEH-HF, AP4533GEH-HF