AP4565GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4565GM

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.6(6.5) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025(0.033) Ohm

Encapsulados: SO8

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AP4565GM datasheet

 ..1. Size:94K  ape
ap4565gm.pdf pdf_icon

AP4565GM

AP4565GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D2 D2 D2 Low On-resistance D2 RDS(ON) 25m D1 D1 D1 D1 Fast Switching Performance ID 7.6A G2 G2 P-CH BVDSS -40V S2 S2 G1 SO-8 S1 G1 RDS(ON) 33m SO-8 S1 Descri

 0.1. Size:890K  cn vbsemi
ap4565gm-30v.pdf pdf_icon

AP4565GM

AP4565GM&-30V www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 a

 9.1. Size:136K  ape
ap4563gh.pdf pdf_icon

AP4565GM

AP4563GH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 8A S1 G1 S2 RoHS Compliant P-CH BVDSS -40V G2 RDS(ON) 36m TO-252-4L Description ID -7.3A Advanced Power MOSFETs from APEC provide the de

 9.2. Size:115K  ape
ap4569gm.pdf pdf_icon

AP4565GM

AP4569GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D2 D2 Fast Switching Performance RDS(ON) 36m D1 D1 RoHS Compliant ID 5.8A G2 P-CH BVDSS -40V S2 G1 S1 SO-8 RDS(ON) 68m Description ID -4.2A The Advanced Power MOSFETs from APEC provide the designer with the be

Otros transistores... AP4501AGM, AP4501GM-HF, AP4502GM-HF, AP4503GM-HF, AP4511GED, AP4511GH-HF, AP4525GEH-HF, AP4533GEH-HF, K2611, AP80T10AGP-HF, AP80T12GP-HF, AP9962AGH-HF, AP9962GM, AP9967GM-HF, AP9971AGH-HF, AP9971AGJ-HF, AP9971AGS-HF