AP9980GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9980GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 21.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO252

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AP9980GH-HF datasheet

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 ap9980gh-hf.pdf pdf_icon

AP9980GH-HF

AP9980GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description AP9980 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowe

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AP9980GH-HF

AP9980GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-

 6.1. Size:174K  ape
 ap9980gh.pdf pdf_icon

AP9980GH-HF

AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo

 7.1. Size:218K  ape
 ap9980gj.pdf pdf_icon

AP9980GH-HF

AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo

MOSTRAR MÁS

Otros transistores... AP9967GM-HF, AP9971AGH-HF, AP9971AGJ-HF, AP9971AGS-HF, AP9971GH-HF, AP9971GJ-HF, AP9974GS, AP9977AGH-HF, IRF840, AP9980GJ-HF, AP9980GM-HF, AP9915GK, AP9916GH, AP9916GJ, AP9918GH, AP9938GEY-HF, AP9938GEYT-HF