AP9938GEYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9938GEYT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: PMPAK3X3

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AP9938GEYT-HF Datasheet (PDF)

..1. Size:71K ape
ap9938geyt-hf.pdf

AP9938GEYT-HFHalogen-Free ProductAdvanced Power DUAL N CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1/D2 Capable of 1.8V Gate Drive BVDSS 20V Good Thermal Performance RDS(ON) 16m Fast Switching Performance ID 10AS1 RoHS Compliant & Halogen-FreeG1S2D1/D2G2Description PMPAK 3x3G1 G2AP9938 series are from Advanced Power innovated design and

5.1. Size:177K ape
ap9938gey.pdf

AP9938GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 16mG2 Surface Mount Package ID 7.5AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev

5.2. Size:97K ape
ap9938gey-hf.pdf

6.1. Size:73K ape
ap9938gem-hf.pdf

AP9938GEM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series are from Advanced Power innovated design andD1 D2silicon pr

6.2. Size:144K ape
ap9938geo.pdf

AP9938GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2S2 Low on-resistance S2 BVDSS 20VD2 Capable of 1.8V Gate Drive G1 RDS(ON) 18mS1S1TSSOP-8D1 Optimal DC/DC Battery Application ID3 6A Halogen Free & RoHS Compliant ProductDescriptionD1 D2Advanced Power MOSFETs from APEC provide the designer

6.3. Size:170K ape
ap9938gem.pdf

AP9938GEM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 20VD2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Performance ID 8.5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP9938 series a

6.4. Size:73K ape
ap9938geo-hf.pdf

AP9938GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETG2S2 Low on-resistance S2 BVDSS 20VD2 Capable of 1.8V Gate Drive G1 RDS(ON) 18mS1S1TSSOP-8D1 Optimal DC/DC Battery Application ID 6A Halogen Free & RoHS Compliant ProductDescriptionD1 D2Advanced Power MOSFETs from APEC provide the designer

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