AP70T03AS Todos los transistores

 

AP70T03AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP70T03AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 245 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

AP70T03AS Datasheet (PDF)

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ap70t03as ap70t03ap.pdf pdf_icon

AP70T03AS

AP70T03AS/PAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A GSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-263(S)designer with the best combination of fast switching,ruggedized dev

 6.1. Size:71K  ape
ap70t03ah ap70t03aj.pdf pdf_icon

AP70T03AS

AP70T03AH/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A GSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low o

 7.1. Size:121K  ape
ap70t03gi.pdf pdf_icon

AP70T03AS

AP70T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance

 7.2. Size:98K  ape
ap70t03gh-hf ap70t03gj-hf.pdf pdf_icon

AP70T03AS

AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device des

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