AP70T03GH-HF Todos los transistores

 

AP70T03GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70T03GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 53 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO252

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AP70T03GH-HF datasheet

 ..1. Size:98K  ape
ap70t03gh-hf ap70t03gj-hf.pdf pdf_icon

AP70T03GH-HF

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device des

 5.1. Size:98K  ape
ap70t03gh.pdf pdf_icon

AP70T03GH-HF

AP70T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, low on-resistanc

 5.2. Size:843K  cn vbsemi
ap70t03gh.pdf pdf_icon

AP70T03GH-HF

AP70T03GH www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOL

 6.1. Size:121K  ape
ap70t03gi.pdf pdf_icon

AP70T03GH-HF

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Otros transistores... AP9918GH , AP9938GEY-HF , AP9938GEYT-HF , AP9960GH-HF , AP9960GJ-HF , AP70T03AH , AP70T03AJ , AP70T03AS , IRFB4227 , AP70U02GH , AP72T03GJ-HF , AP72T03GP , AP75T10GS-HF , AP76T03AGMT-HF , AP7811GM , AP4800AGM , AP4816GSM .

History: SPD65R360G | WMQ30N04TS | AP9916GJ | SP3902 | AP9916GH | NTMD5836NL | AD90N03S

 

 

 

 

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